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| MJD44H11 (NPN) MJD45H11 (PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features http://onsemi.com * Pb-Free Packages are Available * Lead Formed for Surface Mount Application in Plastic Sleeves * Straight Lead Version in Plastic Sleeves ("-1" Suffix) * Lead Formed Version in 16 mm Tape and Reel for Surface Mount * * * * * * ("T4" Suffix) Electrically Similar to Popular D44H/D45H Series Low Collector Emitter Saturation Voltage - VCE(sat) = 1.0 Volt Max @ 8.0 Amperes Fast Switching Speeds Complementary Pairs Simplifies Designs Epoxy Meets UL 94, V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V (No Suffix) SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS MARKING DIAGRAMS 4 12 3 DPAK CASE 369C STYLE 1 YWW J4 xH11 4 DPAK-3 CASE 369D STYLE 1 2 3 Y WW x = Year = Work Week = 4 or 5 YWW J4 xH11 MAXIMUM RATINGS Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation* @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VEB IC PD PD TJ, Tstg Max 80 5 8 16 20 0.16 1.75 0.014 -55 to + 150 Unit Vdc Vdc Adc W W/C W W/C C 1 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Lead Temperature for Soldering Symbol RqJC RqJA TL Max 6.25 71.4 260 Unit C/W C/W C *These ratings are applicable when surface mounted on the minimum pad sizes recommended. (c) Semiconductor Components Industries, LLC, 2004 1 August, 2004 - Rev. 6 Publication Order Number: MJD44H11/D IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I II III I I I I IIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I III I I I I IIII I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I III I I I I IIII I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII SWITCHING TIMES DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Fall Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc) Storage Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc) Delay and Rise Times (IC = 5 Adc, IB1 = 0.5 Adc) Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz) DC Current Gain (VCE = 1 Vdc, IC = 4 Adc) DC Current Gain (VCE = 1 Vdc, IC = 2 Adc) Base-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) Collector-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) Emitter Cutoff Current (VEB = 5 Vdc) Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) Collector-Emitter Sustaining Voltage (IC = 30 mA, IB = 0) Characteristic MJD44H11 (NPN) MJD45H11 (PNP) http://onsemi.com MJD44H11 MJD45H11 MJD44H11 MJD45H11 MJD44H11 MJD45H11 MJD44H11 MJD45H11 MJD44H11 MJD45H11 VCEO(sus) Symbol VCE(sat) VBE(sat) td + tr IEBO ICES hFE Ccb fT ts tf Min 40 60 80 - - - - - - - - - - - - - - Typ 140 100 500 500 300 135 130 230 50 40 - - - - - - - Max 1.5 50 10 - - - - - - - - - - - - 1 - MHz Unit Vdc Vdc Vdc mA mA pF ns ns ns - 2 MJD44H11 (NPN) MJD45H11 (PNP) ORDERING INFORMATION Device MJD44H11 MJD44H11-001 MJD44H11G MJD44H11RL MJD44H11T4 MJD44H11T4G MJD44H11T5 MJD45H11 MJD45H11-001 MJD45H11G MJD45H11RL MJD45H11T4 MJD45H11T4G Package Type DPAK DPAK-3 DPAK (Pb-Free) DPAK DPAK DPAK (Pb-Free) DPAK DPAK DPAK-3 DPAK (Pb-Free) DPAK DPAK DPAK (Pb-Free) Package 369C 369D 369C 369C 369C 369C 369C 369C 369D 369C 369C 369C 369C Shipping 75 Units / Rail 75 Units / Rail 75 Units / Rail 1800 Tape & Reel 2500 Tape & Reel 2500 Tape & Reel 2500 Tape & Reel 75 Units / Rail 75 Units / Rail 75 Units / Rail 1800 Tape & Reel 2500 Tape & Reel 2500 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 MJD44H11 (NPN) MJD45H11 (PNP) 1 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 SINGLE PULSE 0.05 0.02 0.01 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 RqJC(t) = r(t) RqJC RqJC = 6.25C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 23 5 t, TIME (ms) 10 20 30 50 100 200 300 500 1k Figure 1. Thermal Response 20 IC, COLLECTOR CURRENT (AMP) 10 5 3 2 1 0.5 0.3 0.1 THERMAL LIMIT @ TC = 25C WIRE BOND LIMIT dc 5 ms 500 ms 100 ms 1 ms 0.05 0.02 1 5 7 10 20 30 3 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 2. Maximum Forward Bias Safe Operating Area TA TC 2.5 25 PD, POWER DISSIPATION (WATTS) 2 20 TC 1.5 15 1 10 TA SURFACE MOUNT 0.5 0 5 0 25 50 75 100 125 150 T, TEMPERATURE (C) Figure 3. Power Derating http://onsemi.com 4 MJD44H11 (NPN) MJD45H11 (PNP) 1000 1000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 100 VCE = 4 V VCE = 4 V 100 1V TJ = 25C TJ = 25C VCE = 1 V 10 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 10 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 4. MJD44H11 DC Current Gain Figure 5. MJD45H11 DC Current Gain 1000 1000 TJ = 125C 25C -40 C 100 VCE = 1 V hFE , DC CURRENT GAIN TJ = 125C 25C 100 -40 C VCE = 1 V 10 hFE , DC CURRENT GAIN 1 10 0.1 10 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 IC, COLLECTOR CURRENT (AMPS) Figure 6. MJD44H11 Current Gain versus Temperature Figure 7. MJD45H11 Current Gain versus Temperature 1.2 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 1 0.8 0.6 0.4 0.2 0 0.1 IC/IB = 10 TJ = 25C VCE(sat) VBE(sat) 1.2 1 0.8 0.6 0.4 0.2 0 0.1 IC/IB = 10 TJ = 25C VCE(sat) 10 VBE(sat) 1 IC, COLLECTOR CURRENT (AMPS) 10 1 IC, COLLECTOR CURRENT (AMPS) Figure 8. MJD44H11 On-Voltages Figure 9. MJD45H11 On-Voltages http://onsemi.com 5 MJD44H11 (NPN) MJD45H11 (PNP) PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- -T- B V R 4 SEATING PLANE C E A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) T DIM A B C D E F G H J K L R S U V Z M STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MJD44H11 (NPN) MJD45H11 (PNP) PACKAGE DIMENSIONS DPAK-3 CASE 369D-01 ISSUE B B V R 4 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- Z A 3 S -T- SEATING PLANE 1 2 K F D G 3 PL J H 0.13 (0.005) M DIM A B C D E F G H J K R S V Z T STYLE 1: PIN 1. 2. 3. 4. http://onsemi.com 7 MJD44H11 (NPN) MJD45H11 (PNP) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 8 MJD44H11/D |
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